EC2403 RF AND MICROWAVE ENGINEERING

EC2403 RF AND MICROWAVE ENGINEERING L T P C

3 0 0 3

UNIT I TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION 9

Low frequency parameters-impedance ,admittance, hybrid and ABCD. High frequency

parameters-Formulation of S parameters, properties of S parameters-Reciprocal and

lossless networks, transmission matrix, Introduction to component basics, wire, resistor,

capacitor and inductor, applications of RF

UNIT II RF TRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS

9

Amplifier power relation, stability considerations, gain considerations noise figure,

impedance matching networks, frequency response, T and Π matching networks,

microstripline matching networks

UNIT III MICROWAVE PASSIVE COMPONENTS 9

Microwave frequency range, significance of microwave frequency range - applications of

microwaves. Scattering matrix -Concept of N port scattering matrix representation-

Properties of S matrix- S matrix formulation of two-port junction. Microwave junctions -

Tee junctions -Magic Tee - Rat race - Corners - bends and twists - Directional couplers -

two hole directional couplers- Ferrites - important microwave properties and applications

– Termination - Gyrator- Isolator-Circulator - Attenuator - Phase changer – S Matrix for

microwave components – Cylindrical cavity resonators.

UNIT IV MICROWAVE SEMICONDUCTOR DEVICES 9

Microwave semiconductor devices- operation - characteristics and application of BJTs

and FETs -Principles of tunnel diodes - Varactor and Step recovery diodes - Transferred

Electron Devices -Gunn diode- Avalanche Transit time devices- IMPATT and TRAPATT

devices. Parametric devices -Principles of operation - applications of parametric

amplifier .Microwave monolithic integrated circuit (MMIC) - Materials and fabrication

techniques

UNIT V MICROWAVE TUBES AND MEASUREMENTS 9

Microwave tubes- High frequency limitations - Principle of operation of Multicavity

Klystron, Reflex Klystron, Traveling Wave Tube, Magnetron. Microwave measurements:

Measurement of power, wavelength, impedance, SWR, attenuation, Q and Phase shift.

TOTAL= 45 PERIODS

TEXT BOOK:

1) Samuel Y Liao, “Microwave Devices & Circuits” , Prentice Hall of India, 2006.

2) Reinhold.Ludwig and Pavel Bretshko ‘RF Circuit Design”, Pearson Education, Inc.,

2006

REFERENCES:

1.

Robert. E.Collin-Foundation of Microwave Engg –Mc Graw Hill.

2.

Annapurna Das and Sisir K Das, “Microwave Engineering”, Tata Mc Graw

3.

Hill Inc., 2004.

4.

Education, 2007.

5. Robert E.Colin, 2ed “Foundations for Microwave Engineering”, McGraw Hill, 2001

6. D.M.Pozar, “Microwave Engineering.”, John Wiley & sons, Inc., 2006.M.M.Radmanesh , RF & Microwave Electronics Illustrated, Pearson